"""数据实体类 - 封装抓取结果"""
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And no matter what, the plan to use Russian assets remains problematic, since the ISS would have a “shallower reentry,” NASA says, and sprinkle surviving debris over a larger-than-desired area. Still, NASA would retain significant control over where any of these extant shards might plop down. They’ll probably land in the ocean, just as the space agency has always hoped. Sure, the station would have died before its time, but the thing was getting old. Most likely, it will be fine.
在传统存储产品方面,10nm以下DRAM制造工艺正成为主流,并逐步向7nm工艺突破,通过“FinFET架构+TSV技术”提升密度、降低功耗。3D NAND堆叠层数突破400层后,“垂直堆叠”难度加剧,厂商转向“水平扩展+架构优化”,比如三星V-NAND的阶梯式架构、Kioxia的BiCS架构,同时引入“HKC(高K介质+金属栅)”技术,解决高层数堆叠的漏电、散热问题,制造工艺从“层数竞赛”转向“架构+工艺”双重竞争。